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Transistor L14F1 Photodarlington
Transistor L14F1 Photodarlington
| Mounting Type | Ā Through Hole |
| Collector to Emitter Breakdown VoltageĀ | Ā 25 V |
| Collector to Base Breakdown Voltage | Ā 25 V |
| Emitter to Base Breakdwon Voltage | Ā 12 V |
| On-State Collector Current | Ā 7.5 mA |
| Reception Angle | Ā Ā±8Ā° |
| Operating Temperature Range | Ā -65Ā°C to +125Ā°C |
| Transistor Polarity | Ā NPN |
| Non Sensitivity @ mW/cmĀ² | Ā 3.4mA @ 200ĀµW / cmĀ² |
It is an L14F1 Photodarlington. This a silicon Photodarlington that is mounted on a narrow-angle. The Photodarlington is hermetically sealed.
$2.79
Transistor L14F1 Photodarlingtonā
$2.79
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Description
Transistor L14F1 Photodarlington
| Mounting Type | Ā Through Hole |
| Collector to Emitter Breakdown VoltageĀ | Ā 25 V |
| Collector to Base Breakdown Voltage | Ā 25 V |
| Emitter to Base Breakdwon Voltage | Ā 12 V |
| On-State Collector Current | Ā 7.5 mA |
| Reception Angle | Ā Ā±8Ā° |
| Operating Temperature Range | Ā -65Ā°C to +125Ā°C |
| Transistor Polarity | Ā NPN |
| Non Sensitivity @ mW/cmĀ² | Ā 3.4mA @ 200ĀµW / cmĀ² |
It is an L14F1 Photodarlington. This a silicon Photodarlington that is mounted on a narrow-angle. The Photodarlington is hermetically sealed.
