1N 5819 40V 1A Schottky Barrier Diode

The IN5819 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. The 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 

Features:-

• Extremely Low VF 
• Low Stored Charge, Majority Carrier Conduction 
• Low Power Loss/High Efficiency 
• These are Pb−Free Devices
• Low profile, axial leaded outline 
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 
• Very low forward voltage drop 
• High frequency operation 
• Guard ring for enhanced ruggedness and long term reliability 
• Lead-Free plating

Mechanical Characteristics:-

• Case: Epoxy, Molded 
• Weight: 0.4 Gram (Approximately) 
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 
• Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds 
• Polarity: Cathode Indicated by Polarity Band 
• ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) 

Specification:-

Symbol	Parameter	Value	Units
VRRM	Peak Repetitive Reverse Voltage	40	V
VRWM	Working Peak Reverse Voltage	40	V
VR	DC Blocking Voltage	40	V
VR(RMS)	RMS Reverse Voltage	28	V
VRSM	Non−Repetitive Peak Reverse Voltage	48	V
IO	Average Rectified Output Current	1	A
IFSM	Non-Repetitive Peak Forward Surge Current	25	A
TJ	Operating Junction Temperature Range	− 65 to +125	°C
Tstg	Storage Temperature Range	− 65 to +150	°C