IRF840 IRFS840 N-channel 8A 500V Power MOSFET
IRF840 N-channel 8A 500V Power MOSFET
IRF840 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 500V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 850mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 39 nC |
| Operating Temperature Range | -65 - 150°C |
| Power Dissipation (Pd) | 125W |
Product details
- Product type: MOSFET
- IC number: IRF840
- Polarity: N-channel
- Number of pins: 3
- Mounting type: through hole
- Package: TO-220AB
Replacement and Equivalent:
YTA840, IRF841, IRF842, IRF843, IRFI840G, IRFS840, IRFS841, STP8NA50, 2SK554, 2SK1158, 2SK1566, 2SK1567, 2SK1805, 2SK2116, 2SK2117, 2SK2118, 2SK2175, IRF744.
Original: $0.38
-71%$0.38
$0.11Product Information
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Description
IRF840 N-channel 8A 500V Power MOSFET
IRF840 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 500V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 850mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 39 nC |
| Operating Temperature Range | -65 - 150°C |
| Power Dissipation (Pd) | 125W |
Product details
- Product type: MOSFET
- IC number: IRF840
- Polarity: N-channel
- Number of pins: 3
- Mounting type: through hole
- Package: TO-220AB
Replacement and Equivalent:
YTA840, IRF841, IRF842, IRF843, IRFI840G, IRFS840, IRFS841, STP8NA50, 2SK554, 2SK1158, 2SK1566, 2SK1567, 2SK1805, 2SK2116, 2SK2117, 2SK2118, 2SK2175, IRF744.
