IRF630 200V 9A N-Channel Power MOSFET

IRF630 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

•  Dynamic dv/dt rating
•  Repetitive avalanche rated
•  Fast switching
•  Ease of paralleling
•  Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
• 175℃ operating temperature
• Product: IRF630
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole

Detailed Specifications:-

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds)	200V
Continuous Drain Current (Id)	9A
Drain-Source Resistance (Rds On)	0.4Ohms
Gate-Source Voltage (Vgs)	20V
Gate Charge (Qg)	43 NC
Operating Temperature Range	-55 - 150°C
Power Dissipation (Pd)	74W